PART |
Description |
Maker |
2SK3050 |
Low on-resistance. Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits.
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TY Semiconductor Co., Ltd
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STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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KHP45N03LT |
Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
2SK680A |
Directly driven by Ics having a 5V power source. Has low on-state resistance RDS(on)=1.0MAX
|
TY Semiconductor Co., L...
|
2SK1959 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX
|
TY Semiconductor Co., Ltd
|
AP9926GEO-HF AP9926GEO-HF-14 |
Capable of 2.5V Gate Drive, Surface Mount Package Low On-resistance
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Advanced Power Electronics Corp. Advanced Power Electronics ...
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2SK3794 |
Low On-state resistance RDS(on)1 = 44 m MAX. Built-in gate protection diode
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TY Semiconductor Co., Ltd
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ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包) MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V From old datasheet system MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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2SK3294 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
2SK3481 |
Super low on-state resistance: RDS(on)1 = 50 m MAX. Built-in gate protection diode
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TY Semiconductor Co., Ltd
|
KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
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TY Semiconductor Co., Ltd
|
KI1902DL |
Drain-source voltage Vds 20V Gate-source voltage Vgs -12V
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TY Semiconductor Co., L...
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